The next-generation power semiconductor is here! Mitsubishi Electric’s new SUMMIT SERIES™ UPS replaces the Si (silicon) IGBT with advanced capability SiC (silicon carbide) semiconductors. The Institute of Electrical and Electronics Engineers (IEEE) states silicon carbide is to the 21st century what silicon was to the 20th century. Mitsubishi Electric began development of SiC (Silicon Carbide) semiconductors during the early 1990’s and now offers this proven technology for deployment in Mitsubishi’s UPS. Higher efficiencies are achieved across all load levels with SiC’s lower switching losses, higher switching frequencies, and improved thermal conductivity range.